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| PD- 91844A IRF7210 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -12V 3 6 4 5 RDS(on) = 0.007 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Junction and Storage Temperature Range Max. -12 16 12 100 2.5 1.6 0.02 12 16 -55 to + 150 Units V A W W/C V V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 7/30/99 IRF7210 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -14 -12 --- --- --- -0.6 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- 0.011 .005 .007 --- --- --- --- --- --- --- 212 27 52 50 3.0 6.5 30 17179 9455 8986 Max. Units Conditions --- V VGS = 0V, ID = -5.0mA --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA .007 VGS = -4.5V, ID = -16A .010 VGS = -2.5V, ID = -12A --- V VDS = VGS, ID = -500A --- S VDS = -10V, ID = -16A -10 VDS = -12V, VGS = 0V -1.0 VDS = -9.6V, VGS = 0V A -100 VDS = -12V, VGS = 0V, T J = 70C -100 nA VGS = -12V 100 VGS = 12V 318 ID = -10A 41 nC VDS = -10V 78 VGS = -5.0V --- ns VDD = -10V --- ID = -10A s --- RD = 1.0 --- RG = 6.2 --- VGS = 0V --- pF VDS = -10V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 165 296 -2.5 A -100 -1.2 247 444 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, I F = -2.5A di/dt = 85A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7210 20 TO P VG S -1.8V -1 .6V -1 .4V -1 .2V -1 .0V BO TT O M -0 .8V 16 30 0s PU L SE W ID T H T J = 2 5C -I , D rain-to-S ourc e C urrent (A) D 16 -I , D rain-to-S ourc e C urrent (A) D VG S -1.8V -1.6V -1.4V -1.2V -1.0V BO TTO M -0.8V TOP 300s PU LSE W IDTH T J = 150C 12 12 8 8 4 4 -0.8V -0.8V 0 0 2 4 6 8 10 A 0 0 2 4 6 8 10 A -V DS , D rain-to-So urc e Voltage (V) -V D S, D rain-to-Sourc e Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 140 2.0 ID = -16A 120 TJ = 2 5 C 100 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , D ra in-to -S o urc e C urre nt (A ) 1.5 80 1.0 60 TJ = 1 5 0 C 40 0.5 20 0 0.0 2.0 V D S = -1 0 V 3 0 0 s P U L S E W ID T H 4.0 6.0 8.0 A 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -V G S , G ate-to -Source Vo lta ge (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7210 24000 -V S , G ate-to-S ourc e V oltage (V ) G V GS = C is s = C rs s = C oss = 0V, f = 1MHz Cg s + C g d , Cd s SHORTE D C gd C ds + C gd 10 I D = -1 0A V D S = -1 2V 8 C , Capacitance (pF) 20000 C iss 16000 6 4 12000 C o ss C rss 8000 0 2 4 6 8 10 12 2 A 0 0 50 100 150 200 250 300 A -V D S , D ra in-to-Sourc e Voltage (V) Q G , T otal G a te C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 RDS(on) , Drain-to-Source On Resistance ( ) -ID , Drain Current (A) I 1000 -I SD , Rev erse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 25C TJ = 150C 100 100us 1ms 10 10ms 10 1 0.0 2.0 4.0 6.0 V G S = 0V 8.0 A 10.0 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -V S D , S ou rce-to-D ra in Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area. 4 www.irf.com IRF7210 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 1 0.1 0.001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7210 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M 5 8 E -A - 7 A1 B C D E e e1 H K 1 2 3 4 AM e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS 0 .10 (.00 4) L 8X 6 C 8X L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking 6 www.irf.com IRF7210 Tape and Reel SO-8 T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 7/99 www.irf.com 7 |
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